advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower gate charge r ds(on) 21m fast switching characteristic i d 30a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200806021 1 AP9976GP rohs-compliant product parameter rating drain-source voltage 60 gate-source voltage 20 continuous drain current, v gs @ 10v 30 continuous drain current, v gs @ 10v 19 pulsed drain current 1 100 total power dissipation 39 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-industrial through-hole applications. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 21 m ? ?
AP9976GP fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0 v 6.0 v 5.0 v v gs =4.0v 0 4 8 12 16 20 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10 20 30 40 246810 v gs gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9976GP 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =12a q v g 10v q gs q gd q g charge 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oxx c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-220 millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 2.54 ref. 7.4 ref, symbols advanced power electronics corp. 5.10 ref. e1 b b1 e d l4 l1 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 9976gp ywwsss logo l5 meet rohs requirement e d1 5
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